DSI2X55-12A parallel legs standard rectifier 2 3 1 4 part number DSI2X55-12A backside: isolated fav f vv 1.22 rrm 60 1200 = v= v i= a 2x features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations sot-227b (minibloc) industry standard outline rohs compliant epoxy meets ul 94v-0 base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 ixys reserves the right to change limits, conditions and dimensions. 20130307b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSI2X55-12A v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.26 r 0.6 k/w r min. 60 v rsm v 100 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 95 p tot 210 w t = 25c c r k/w 60 1200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.54 t = 25c vj 150 v f0 v 0.83 t = c vj 150 r f 6.2 m ? v 1.22 t = c vj i = a f v 60 1.58 i = a f 120 i = a f 120 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 25 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 800 865 2.31 2.25 a a a a 680 735 3.20 3.12 1200 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1300 0.10 ixys reserves the right to change limits, conditions and dimensions. 20130307b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSI2X55-12A ratings abcde yywwz xxxxxx product marking logo part no. datecode assembly code assembly line package t vj c m d nm 1.5 mounting torque 1.1 t stg c 150 storage temperature -40 weight g 30 symbol definition typ. max. min. conditions virtual junction temperature unit m t nm 1.5 terminal torque 1.1 v v t = 1 second v t = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 150 a per terminal 150 -40 terminal to terminal sot-227b ( minibloc ) similar part package voltage class dsi2x55-16a sot-227b (minibloc) 1600 delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol DSI2X55-12A 477052 tube 10 DSI2X55-12A standard 2500 3000 isol threshold voltage v 0.83 m ? v 0 max r 0 max slope resistance * 4.3 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130307b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSI2X55-12A 2 3 1 4 outlines sot-227b (minibloc) ixys reserves the right to change limits, conditions and dimensions. 20130307b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSI2X55-12A 0.001 0.01 0.1 1 200 300 400 500 600 700 234567890 1 1 10 2 10 3 10 4 0.4 0.8 1.2 1.6 0 20 40 60 80 100 120 0 1020304050 0 20 40 60 0 25 50 75 100 125 150 175 1 10 100 1000 10000 0.0 0.2 0.4 0.6 i f [a] 0 255075100125150 0 40 80 120 160 v f [v] i fsm [a] t[s] i 2 t [a 2 s] t[ms] p tot [w] i f(av)m t ] a [ amb [c] i f(av)m [a] t c [c] t[ms] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current & ambient temperature fig. 5 max. forward current versus case temperature fi g . 6 transient thermal impedance j unctiontocase constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.031 0.00024 2 0.0554 0.0036 3 0.114 0.0235 4 0.281 0.142 5 0.1686 0.7 t vj =150c t vj = 45c 50 hz, 80% v rrm t vj = 45c t vj =150c v r = 0 v 0.7 t vj =125c 150c t vj = 125c r thha : 0.2 k/w 0.4 k/w 0.6 k/w 0.8 k/w 1.0 k/w 2.0 k/w dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 rectifier ixys reserves the right to change limits, conditions and dimensions. 20130307b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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